IRF1404ZSTRLPBF

Teknik Özellikler

Montaj Tipi

Surface Mount

Seri

HEXFET®

Pin Sayısı

3

Threshold Voltage

4V

Transistor Element Material

SILICON

Case Connection

DRAIN

Element Configuration

Single

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation

200W

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

4V @ 150μA

Yayın Yılı

2003

Input Capacitance Ciss Max Vds

4340pF @ 25V

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

40V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

200W Tc

Terminal Sayısı

2

Tepe Reflow Sıcaklığı (°C)

260

Direnç

3.7MOhm

Parça Durumu

Active

Yükseklik

4.826mm

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time

18 ns

Number Of Elements

1

Fet Type

N-Channel

Turn Off Delay Time

36 ns

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Rds On Max Id Vgs

3.7m Ω @ 75A, 10V

Vgs Max

±20V

Fall Time Typ

58 ns

Genişlik

9.65mm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application

SWITCHING

Current Continuous Drain Id25

180A Tc

Nominal Vgs

4 V