IRF135SA204

Teknik Özellikler

Input Capacitance Ciss Max Vds

11690pF @ 50V

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

315nC @ 10V

Yayın Yılı

2013

Vgsth Max Id

4V @ 250μA

Fabrika Tedarik Süresi

12 Weeks

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

160A Tc

Montaj

Surface Mount

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

6

Jesd30 Code

R-PSSO-G6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

160A

Drain To Source Voltage Vdss

135V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

500W Tc

Terminal Formu

GULL WING

Fet Type

N-Channel

Ds Breakdown Voltagemin

135V

Pulsed Drain Currentmax Idm

608A

Number Of Elements

1

Transistor Element Material

SILICON

Jedec95 Code

TO-263CB

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Seri

HEXFET®, StrongIRFET™

Drainsource On Resistancemax

0.0059Ohm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Avalanche Energy Rating Eas

1280 mJ

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab) Variant

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Rds On Max Id Vgs

5.9m Ω @ 96A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN