IRF1104PBF

Teknik Özellikler

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Seri

HEXFET®

Pin Sayısı

3

Threshold Voltage

4V

Power Dissipation

170W

Element Configuration

Single

Terminal

Through Hole

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

2900pF @ 25V

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tube

Vgsth Max Id

4V @ 250μA

Yayın Yılı

1998

Terminal Sayısı

3

Direnç

9mOhm

Parça Durumu

Active

Power Dissipation Max

170W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

40V

Pulsed Drain Currentmax Idm

400A

Turn On Delay Time

15 ns

Number Of Elements

1

Fet Type

N-Channel

Yükseklik

8.77mm

Jedec95 Code

TO-220AB

Rds On Max Id Vgs

9m Ω @ 60A, 10V

Vgs Max

±20V

Reach Svhc

No SVHC

Fall Time Typ

19 ns

Kılıf / Paket

TO-220-3

Genişlik

4.69mm

Turn Off Delay Time

28 ns

Drive Voltage Max Rds On Min Rds On

10V

Radyasyon Dayanımı

No

Recovery Time

110 ns

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

93nC @ 10V