IRF1018ESLPBF

Teknik Özellikler

Transistor Element Material

SILICON

Seri

HEXFET®

Drainsource On Resistancemax

0.0084Ohm

Montaj Tipi

Through Hole

Threshold Voltage

4V

Pin Sayısı

3

Avalanche Energy Rating Eas

88 mJ

Power Dissipation

110W

Tepe Reflow Süresi (maks. sn)

40

Case Connection

DRAIN

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

2290pF @ 50V

Ambalaj

Tube

RoHS Durumu

RoHS Compliant

Vgsth Max Id

4V @ 100μA

Yayın Yılı

2004

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Parça Durumu

Obsolete

Power Dissipation Max

110W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

60V

Turn On Delay Time

13 ns

Number Of Elements

1

Fet Type

N-Channel

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Yükseklik

9.65mm

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs Max

±20V

Rds On Max Id Vgs

8.4m Ω @ 47A, 10V

Reach Svhc

No SVHC

Terminal Pozisyonu

SINGLE

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Genişlik

4.826mm

Fall Time Typ

46 ns

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Turn Off Delay Time

55 ns

Recovery Time

39 ns

Radyasyon Dayanımı

No