IRF1010ZSTRLPBF

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

4V @ 250μA

Yayın Yılı

2001

Input Capacitance Ciss Max Vds

2840pF @ 25V

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

55V

Power Dissipation Max

140W Tc

Terminal Sayısı

2

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Montaj Tipi

Surface Mount

Seri

HEXFET®

Drainsource On Resistancemax

0.0075Ohm

Pin Sayısı

3

Transistor Element Material

SILICON

Case Connection

DRAIN

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation

140W

Transistor Application

SWITCHING

Current Continuous Drain Id25

75A Tc

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

95nC @ 10V

Terminal Formu

GULL WING

Continuous Drain Current Id

75A

Uzunluk

10.668mm

Rise Time

150ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Yükseklik

4.826mm

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1