IRF1010ZPBF

Teknik Özellikler

Pin Sayısı

3

Montaj Tipi

Through Hole

Seri

HEXFET®

Transistor Element Material

SILICON

Case Connection

DRAIN

Power Dissipation

140W

Element Configuration

Single

Yayın Yılı

2003

Vgsth Max Id

4V @ 250μA

Ambalaj

Tube

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

2840pF @ 25V

Power Dissipation Max

140W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

55V

Parça Durumu

Active

Direnç

7.5MOhm

Terminal Sayısı

3

Jedec95 Code

TO-220AB

Yükseklik

8.77mm

Fet Type

N-Channel

Number Of Elements

1

Turn On Delay Time

18 ns

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

36 ns

Kılıf / Paket

TO-220-3

Genişlik

4.69mm

Fall Time Typ

92 ns

Rds On Max Id Vgs

7.5m Ω @ 75A, 10V

Vgs Max

±20V

Reach Svhc

No SVHC

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Akım Değeri

75A

Nominal Vgs

4 V

Current Continuous Drain Id25

75A Tc

Transistor Application

SWITCHING