IRF1010EZPBF

Teknik Özellikler

Pin Sayısı

3

Threshold Voltage

4V

Montaj Tipi

Through Hole

Seri

HEXFET®

Transistor Element Material

SILICON

Case Connection

DRAIN

Power Dissipation

140W

Element Configuration

Single

Avalanche Energy Rating Eas

99 mJ

Vgsth Max Id

4V @ 100μA

Yayın Yılı

2004

Kurşunsuz

Contains Lead, Lead Free

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tube

Input Capacitance Ciss Max Vds

2810pF @ 25V

Gate To Source Voltage Vgs

20V

Power Dissipation Max

140W Tc

Drain To Source Breakdown Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

8.5MOhm

Parça Durumu

Active

Terminal Sayısı

3

Jedec95 Code

TO-220AB

Yükseklik

9.017mm

Fet Type

N-Channel

Turn On Delay Time

19 ns

Number Of Elements

1

Turn Off Delay Time

38 ns

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

54 ns

Kılıf / Paket

TO-220-3

Genişlik

4.826mm

Rds On Max Id Vgs

8.5m Ω @ 51A, 10V

Vgs Max

±20V

Reach Svhc

No SVHC

Additional Feature

AVALANCHE RATED, ULTRA LOW RESISTANCE

Akım Değeri

75A

Nominal Vgs

4 V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks