IRF1010EPBF

Teknik Özellikler

Drain Currentmax Abs Id

75A

Power Dissipation Max

200W Tc

Drain To Source Breakdown Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Direnç

12mOhm

Terminal Sayısı

3

Yayın Yılı

2001

Vgsth Max Id

4V @ 250μA

Ambalaj

Tube

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

3210pF @ 25V

Case Connection

DRAIN

Terminal

Through Hole

Lead Pitch

2.54mm

Power Dissipation

170W

Element Configuration

Single

Threshold Voltage

4V

Pin Sayısı

3

Seri

HEXFET®

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

Uzunluk

10.668mm

Rise Time

78ns

Continuous Drain Current Id

84A

Voltage Rated Dc

60V

Contact Plating

Tin

Montaj

Through Hole

Dual Supply Voltage

60V

Çalışma Sıcaklığı

-55°C~175°C TJ

Fabrika Tedarik Süresi

12 Weeks

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Akım Değeri

84A

Nominal Vgs

4 V

Current Continuous Drain Id25

84A Tc

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

130nC @ 10V