IPZ65R045C7XKSA1

Teknik Özellikler

Element Configuration

Single

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

650V

Number Of Channels

1

Turn On Delay Time

20 ns

Continuous Drain Current Id

46A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Halogen Free

Halogen Free

Transistor Element Material

SILICON

Power Dissipation

227W

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Uzunluk

16.13mm

Vgs Max

±20V

Transistor Application

SWITCHING

Yükseklik

21.1mm

Turn Off Delay Time

82 ns

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

650V

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 1.25mA

Fabrika Tedarik Süresi

18 Weeks

Power Dissipation Max

227W Tc

Fall Time Typ

7 ns

Montaj Tipi

Through Hole

Terminal Sayısı

4

Rds On Max Id Vgs

45m Ω @ 24.9A, 10V

Ambalaj

Tube

Current Continuous Drain Id25

46A Tc

Number Of Elements

1

Rise Time

14ns

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-4