IPZ65R019C7XKSA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Power Dissipation

446W

Halogen Free

Halogen Free

Turn On Delay Time

30 ns

Max Dual Supply Voltage

650V

Continuous Drain Current Id

75A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PSFM-T4

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Turn Off Delay Time

106 ns

Weight

38.000013g

Pulsed Drain Currentmax Idm

496A

Rise Time

27ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

75A Tc

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Terminal Sayısı

4

Ambalaj

Tube

Rds On Max Id Vgs

19m Ω @ 58.3A, 10V

Power Dissipation Max

446W Tc

Fall Time Typ

5 ns

Avalanche Energy Rating Eas

583 mJ

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4V @ 2.92mA

Seri

CoolMOS™ C7

Input Capacitance Ciss Max Vds

9900pF @ 400V