IPZ60R060C7XKSA1

Teknik Özellikler

Gate Charge Qg Max Vgs

68nC @ 10V

Input Capacitance Ciss Max Vds

2850pF @ 400V

Seri

CoolMOS™ C7

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-247-4

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.06Ohm

JESD-609 Kodu

e3

Rds On Max Id Vgs

60m Ω @ 15.9A, 10V

Ambalaj

Tube

Montaj Tipi

Through Hole

Terminal Sayısı

4

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2015

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

35A Tc

Vgsth Max Id

4V @ 800μA

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

159 mJ

Power Dissipation Max

162W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Jesd30 Code

R-PSFM-T4

Montaj

Through Hole

Transistor Application

SWITCHING

Vgs Max

±20V

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Halogen Free

Halogen Free

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

35A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Dual Supply Voltage

600V