IPW65R280C6FKSA1

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Vgs Max

±20V

Transistor Application

SWITCHING

Montaj

Through Hole

Qualification Status

Not Qualified

Turn Off Delay Time

105 ns

Jesd30 Code

R-PSFM-T3

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant

Max Dual Supply Voltage

650V

Turn On Delay Time

13 ns

Continuous Drain Current Id

13.8A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Power Dissipation

104W

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.28Ohm

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Input Capacitance Ciss Max Vds

950pF @ 100V

Kurşunsuz Kodu

yes

Seri

CoolMOS™

Gate Charge Qg Max Vgs

45nC @ 10V

Pin Sayısı

3

Power Dissipation Max

104W Tc

Fall Time Typ

12 ns

Avalanche Energy Rating Eas

290 mJ

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

3.5V @ 440μA

Pulsed Drain Currentmax Idm

39A

Current Continuous Drain Id25

13.8A Tc

Number Of Elements

1

Parça Durumu

Obsolete

Rise Time

11ns