IPW65R150CFDFKSA1

Teknik Özellikler

Gate Charge Qg Max Vgs

86nC @ 10V

Seri

CoolMOS™

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

2340pF @ 100V

Pin Sayısı

3

JESD-609 Kodu

e3

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2011

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

72A

Current Continuous Drain Id25

22.4A Tc

Number Of Elements

1

Parça Durumu

Active

Rise Time

7.6ns

Ambalaj

Tube

Rds On Max Id Vgs

150m Ω @ 9.3A, 10V

Montaj Tipi

Through Hole

Terminal Sayısı

3

Power Dissipation Max

195.3W Tc

Fall Time Typ

5.6 ns

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4.5V @ 900μA

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

700V

Kurşunsuz

Lead Free

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Turn Off Delay Time

52.8 ns

Vgs Max

±20V

Transistor Application

SWITCHING

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Power Dissipation

195.3W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

22.4A