IPW65R099C6FKSA1

Teknik Özellikler

Continuous Drain Current Id

38A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

10.6 ns

Max Dual Supply Voltage

650V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Power Dissipation

278W

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

77 ns

Montaj

Through Hole

Transistor Application

SWITCHING

Vgs Max

±20V

Kurşunsuz

Lead Free

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

845 mJ

Fall Time Typ

6 ns

Power Dissipation Max

278W Tc

Vgsth Max Id

3.5V @ 1.2mA

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Rise Time

9ns

Parça Durumu

Not For New Designs

Number Of Elements

1

Current Continuous Drain Id25

38A Tc

Rds On Max Id Vgs

99m Ω @ 12.8A, 10V

Ambalaj

Tube

Terminal Sayısı

3

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.099Ohm

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE