IPW65R045C7FKSA1

Teknik Özellikler

Drain To Source Breakdown Voltage

650V

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Turn Off Delay Time

82 ns

Yükseklik

25.4mm

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Power Dissipation

227W

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

46A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

20 ns

Number Of Channels

1

Max Dual Supply Voltage

650V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

93nC @ 10V

Pin Sayısı

3

Seri

CoolMOS™ C7

Input Capacitance Ciss Max Vds

4340pF @ 400V

Drainsource On Resistancemax

0.045Ohm

JESD-609 Kodu

e3

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rise Time

14ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

46A Tc

Ambalaj

Tube

Rds On Max Id Vgs

45m Ω @ 24.9A, 10V

Montaj Tipi

Through Hole