IPW60R199CPFKSA1

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

3.5V @ 660μA

Power Dissipation Max

139W Tc

Terminal Sayısı

3

Montaj Tipi

Through Hole

Rds On Max Id Vgs

199m Ω @ 9.9A, 10V

Ambalaj

Tube

Current Continuous Drain Id25

16A Tc

Number Of Elements

1

Parça Durumu

Not For New Designs

Rise Time

5ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Voltage Rated Dc

600V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Akım Değeri

16A

JESD-609 Kodu

e3

Pin Sayısı

3

Input Capacitance Ciss Max Vds

1520pF @ 100V

Kurşunsuz Kodu

yes

Seri

CoolMOS™

Pin Sayısı

3

Gate Charge Qg Max Vgs

43nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn On Delay Time

10 ns

Max Dual Supply Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

16A

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

139W

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Vgs Max

±20V

Turn Off Delay Time

50 ns

Terminal Pozisyonu

SINGLE