IPW60R190E6FKSA1

Teknik Özellikler

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

90 ns

Montaj

Through Hole

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Vgs Max

±20V

Kurşunsuz

Lead Free

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

20.2A

Max Dual Supply Voltage

600V

Turn On Delay Time

12 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Power Dissipation

151W

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

63nC @ 10V

Input Capacitance Ciss Max Vds

1400pF @ 100V

Kurşunsuz Kodu

yes

Seri

CoolMOS™

Pin Sayısı

3

Power Dissipation Max

151W Tc

Fall Time Typ

8 ns

Vgsth Max Id

3.5V @ 630μA

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Current Continuous Drain Id25

20.2A Tc

Number Of Elements

1

Parça Durumu

Not For New Designs

Rise Time

10ns