IPW60R160C6FKSA1

Teknik Özellikler

Radyasyon Dayanımı

No

Pin Sayısı

3

Pin Sayısı

3

Gate Charge Qg Max Vgs

75nC @ 10V

Seri

CoolMOS™

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

1660pF @ 100V

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Rds On Max Id Vgs

160m Ω @ 11.3A, 10V

Ambalaj

Tube

Terminal Sayısı

3

Montaj Tipi

Through Hole

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

23.8A Tc

Number Of Elements

1

Parça Durumu

Not For New Designs

Pulsed Drain Currentmax Idm

70A

Vgsth Max Id

3.5V @ 750μA

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

497 mJ

Fall Time Typ

8 ns

Power Dissipation Max

176W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Turn Off Delay Time

96 ns

Montaj

Through Hole

Transistor Application

SWITCHING

Vgs Max

±20V

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Power Dissipation

176W

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

23.8A