IPW60R125P6XKSA1

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

30A

Configuration

SINGLE WITH BUILT-IN DIODE

Halogen Free

Halogen Free

Transistor Element Material

SILICON

Montaj

Through Hole

Vgs Max

±20V

Transistor Application

SWITCHING

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4.5V @ 960μA

Fabrika Tedarik Süresi

18 Weeks

Avalanche Energy Rating Eas

636 mJ

Power Dissipation Max

219W Tc

Montaj Tipi

Through Hole

Terminal Sayısı

3

Rds On Max Id Vgs

125m Ω @ 11.6A, 10V

Ambalaj

Tube

Current Continuous Drain Id25

30A Tc

Number Of Elements

1

Parça Durumu

Active

Pulsed Drain Currentmax Idm

87A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.125Ohm

Seri

CoolMOS™ P6

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

2660pF @ 100V