IPW60R120C7XKSA1

Teknik Özellikler

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Kurşunsuz

Lead Free

Montaj

Through Hole

Vgs Max

±20V

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Halogen Free

Halogen Free

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

19A

Input Capacitance Ciss Max Vds

1500pF @ 400V

Kurşunsuz Kodu

yes

Seri

CoolMOS™ C7

Gate Charge Qg Max Vgs

34nC @ 10V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.12Ohm

Terminal Sayısı

3

Montaj Tipi

Through Hole

Rds On Max Id Vgs

120m Ω @ 7.8A, 10V

Ambalaj

Tube

Current Continuous Drain Id25

19A Tc

Number Of Elements

1

Parça Durumu

Active

Pulsed Drain Currentmax Idm

66A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 390μA

Fabrika Tedarik Süresi

18 Weeks

Avalanche Energy Rating Eas

78 mJ