IPW60R075CPFKSA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

39A

Max Dual Supply Voltage

600V

Turn On Delay Time

40 ns

Gate To Source Voltage Vgs

20V

Power Dissipation

313W

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

110 ns

Montaj

Through Hole

Vgs Max

±20V

Transistor Application

SWITCHING

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

313W Tc

Fall Time Typ

7 ns

Vgsth Max Id

3.5V @ 1.7mA

Fabrika Tedarik Süresi

52 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

650V

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

39A Tc

Number Of Elements

1

Parça Durumu

Not For New Designs

Rise Time

17ns

Rds On Max Id Vgs

75m Ω @ 26A, 10V

Ambalaj

Tube

Terminal Sayısı

3

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.075Ohm

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Gate Charge Qg Max Vgs

116nC @ 10V

Input Capacitance Ciss Max Vds

4000pF @ 100V