IPW60R070CFD7XKSA1

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Drain Currentmax Abs Id

31A

Transistor Application

SWITCHING

Vgs Max

±20V

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™ CFD7

Input Capacitance Ciss Max Vds

2721pF @ 400V

Gate Charge Qg Max Vgs

67nC @ 10V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Yüzey Montaj

NO

Drainsource On Resistancemax

0.07Ohm

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Terminal Sayısı

3

Ambalaj

Tube

ECCN Kodu

EAR99

Rds On Max Id Vgs

70m Ω @ 15.1A, 10V

Pulsed Drain Currentmax Idm

129A

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

31A Tc

Yayın Yılı

2014

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

650V

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4.5V @ 760μA

Power Dissipation Max

156W Tc

Avalanche Energy Rating Eas

151 mJ