IPW60R040C7XKSA1

Teknik Özellikler

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.04Ohm

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Input Capacitance Ciss Max Vds

4340pF @ 400V

Kurşunsuz Kodu

yes

Seri

CoolMOS™ C7

Gate Charge Qg Max Vgs

107nC @ 10V

Power Dissipation Max

227W Tc

Avalanche Energy Rating Eas

249 mJ

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4V @ 1.24mA

Pulsed Drain Currentmax Idm

211A

Current Continuous Drain Id25

50A Tc

Number Of Elements

1

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2007

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Terminal Sayısı

3

Ambalaj

Tube

Rds On Max Id Vgs

40m Ω @ 24.9A, 10V

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Max Dual Supply Voltage

600V

Continuous Drain Current Id

50A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON