IPW60R031CFD7XKSA1

Teknik Özellikler

Montaj Tipi

Through Hole

Max Junction Temperature Tj

150°C

Terminal Sayısı

3

Rds On Max Id Vgs

31m Ω @ 32.6A, 10V

ECCN Kodu

EAR99

Ambalaj

Tube

Current Continuous Drain Id25

63A Tc

Number Of Elements

1

Parça Durumu

Active

Pulsed Drain Currentmax Idm

277A

Drain To Source Voltage Vdss

650V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2014

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4.5V @ 1.63mA

Fabrika Tedarik Süresi

18 Weeks

Avalanche Energy Rating Eas

326 mJ

Power Dissipation Max

278W Tc

Input Capacitance Ciss Max Vds

5623pF @ 400V

Seri

CoolMOS™ CFD7

Gate Charge Qg Max Vgs

141nC @ 10V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Yüzey Montaj

NO

JESD-609 Kodu

e3

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

278W

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Channels

1

Turn On Delay Time

48 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

63A

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Drain To Source Breakdown Voltage

600V

Transistor Application

SWITCHING

Vgs Max

±20V