IPW60R017C7XKSA1

Teknik Özellikler

Kurşunsuz Kodu

yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yüzey Montaj

NO

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Pulsed Drain Currentmax Idm

495A

Number Of Elements

1

Parça Durumu

Active

Yayın Yılı

2013

Drain To Source Voltage Vdss

650V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Max Junction Temperature Tj

150°C

Terminal Sayısı

3

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

582 mJ

Fabrika Tedarik Süresi

18 Weeks

Jesd30 Code

R-PSFM-T3

Drain To Source Breakdown Voltage

600V

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Terminal Formu

THROUGH-HOLE

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Min. Çalışma Sıcaklığı

-55°C

Turn Off Delay Time

106 ns

Yükseklik

25.4mm

Maks. Çalışma Sıcaklığı

150°C

Gate To Source Voltage Vgs

20V

Drain To Source Resistance

15mOhm

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

446W

Number Of Channels

1

Turn On Delay Time

30 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

109A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED