IPW50R190CEFKSA1

Teknik Özellikler

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant

Fet Type

N-Channel

Fet Feature

Super Junction

Turn Off Delay Time

54 ns

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Power Dissipation

127W

Transistor Element Material

SILICON

Continuous Drain Current Id

18.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Dual Supply Voltage

500V

Turn On Delay Time

9.5 ns

Element Configuration

Single

Gate Charge Qg Max Vgs

47.2nC @ 10V

Pin Sayısı

3

Input Capacitance Ciss Max Vds

1137pF @ 100V

Seri

CoolMOS™

Kurşunsuz Kodu

yes

Pin Sayısı

3

Radyasyon Dayanımı

No

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2000

Current Continuous Drain Id25

18.5A Tc

Number Of Elements

1

Parça Durumu

Obsolete

Rise Time

8.5ns

Ambalaj

Tube

Rds On Max Id Vgs

190m Ω @ 6.2A, 13V

Montaj Tipi

Through Hole

Terminal Sayısı

3

Power Dissipation Max

127W Tc

Fall Time Typ

7.5 ns

Fabrika Tedarik Süresi

6 Weeks

Vgsth Max Id

3.5V @ 510μA

Drive Voltage Max Rds On Min Rds On

13V