IPU80R4K5P7AKMA1

Teknik Özellikler

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

800V

Yüzey Montaj

NO

Montaj Tipi

Through Hole

Fet Feature

Super Junction

Fabrika Tedarik Süresi

18 Weeks

REACH Uyumluluk Kodu

not_compliant

Number Of Elements

1

Terminal Sayısı

3

Seri

CoolMOS™

Vgs Max

±20V

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

4nC @ 10V

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

1 mJ

Input Capacitance Ciss Max Vds

250pF @ 500V

Yayın Yılı

2013

Vgsth Max Id

3.5V @ 200μA

Ds Breakdown Voltagemin

800V

Transistor Element Material

SILICON

Drainsource On Resistancemax

4.5Ohm

Continuous Drain Current Id

1.5A

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Current Continuous Drain Id25

1.5A Tc

Nem Hassasiyeti (MSL)

Not Applicable

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Jesd30 Code

R-PSIP-T3

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

13W Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Ambalaj

Tube

Pulsed Drain Currentmax Idm

2.6A

Terminal Kaplaması

Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

ECCN Kodu

EAR99