IPT60R125G7XTMA1

Teknik Özellikler

Pulsed Drain Currentmax Idm

54A

Terminal Kaplaması

Tin (Sn)

Terminal Formu

FLAT

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

120W Tc

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

20A

Rds On Max Id Vgs

125m Ω @ 6.4A, 10V

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

27nC @ 10V

Avalanche Energy Rating Eas

64 mJ

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Vgs Max

±20V

Terminal Sayısı

3

Seri

CoolMOS™ G7

Fabrika Tedarik Süresi

18 Weeks

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

650V

Jesd30 Code

R-PSSO-F3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-PowerSFN

JESD-609 Kodu

e3

Current Continuous Drain Id25

20A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

600V

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.125Ohm

Vgsth Max Id

4V @ 320μA