IPT60R080G7XTMA1

Teknik Özellikler

Drain To Source Breakdown Voltage

600V

Jesd30 Code

R-PSSO-F3

Kılıf / Paket

8-PowerSFN

Çalışma Sıcaklığı

-40°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.08Ohm

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1640pF @ 400V

Avalanche Energy Rating Eas

97 mJ

Kurşunsuz Kodu

yes

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Vgs Max

±20V

Terminal Sayısı

3

Seri

CoolMOS™ G7

Yükseklik

2.4mm

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Rds On Max Id Vgs

80m Ω @ 9.7A, 10V

Power Dissipation

167W

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Tin (Sn)

Manufacturer Package Identifier

PG-HSOF-8

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

29A Tc

JESD-609 Kodu

e3

Continuous Drain Current Id

29A

Vgsth Max Id

4V @ 490μA

Yayın Yılı

2014

Gate Charge Qg Max Vgs

42nC @ 10V

Turn On Delay Time

19 ns

Number Of Elements

1

Max Junction Temperature Tj

150°C

Number Of Channels

1

Fabrika Tedarik Süresi

18 Weeks

Yüzey Montaj

YES

Drain To Source Voltage Vdss

650V