IPT60R050G7XTMA1

Teknik Özellikler

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Terminal Sayısı

3

Seri

CoolMOS™ G7

Vgs Max

±20V

Number Of Elements

1

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

159 mJ

Gate Charge Qg Max Vgs

68nC @ 10V

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

650V

Parça Durumu

Active

Fabrika Tedarik Süresi

18 Weeks

Kılıf / Paket

8-PowerSFN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

44A Tc

Jesd30 Code

R-PSSO-F3

Vgsth Max Id

4V @ 800μA

Yayın Yılı

2014

Input Capacitance Ciss Max Vds

2670pF @ 400V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.05Ohm

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

600V

Terminal Formu

FLAT

Pulsed Drain Currentmax Idm

135A

Power Dissipation Max

245W Tc

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

44A

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Rds On Max Id Vgs

50m Ω @ 15.9A, 10V

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED