IPT020N10N3ATMA1

Teknik Özellikler

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Terminal Sayısı

8

Seri

OptiMOS™

REACH Uyumluluk Kodu

not_compliant

Yükseklik

2.4mm

Montaj Tipi

Surface Mount

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

6V 10V

Drain To Source Breakdown Voltage

100V

Kılıf / Paket

8-PowerSFN

Çalışma Sıcaklığı

-55°C~175°C TJ

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.02Ohm

Input Capacitance Ciss Max Vds

11200pF @ 50V

Additional Feature

ULTRA LOW RESISTANCE

Terminal Kaplaması

Tin (Sn)

Manufacturer Package Identifier

PG-HSOF-8

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Rds On Max Id Vgs

2m Ω @ 150A, 10V

Power Dissipation

375W

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

156nC @ 10V

Turn On Delay Time

34 ns

Number Of Elements

1

Number Of Channels

1

Fabrika Tedarik Süresi

18 Weeks

Max Junction Temperature Tj

175°C

Threshold Voltage

2V

Max Dual Supply Voltage

100V

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Current Continuous Drain Id25

300A Tc

Continuous Drain Current Id

300A

Vgsth Max Id

3.5V @ 272μA

Yayın Yılı

2012

Terminal Formu

FLAT

Turn Off Delay Time

84 ns