IPT012N06NATMA1

Teknik Özellikler

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Rds On Max Id Vgs

1.2m Ω @ 100A, 10V

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

41A

Power Dissipation Max

214W Tc

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Terminal Formu

FLAT

Terminal Kaplaması

Tin (Sn)

Pulsed Drain Currentmax Idm

960A

Yayın Yılı

2013

Input Capacitance Ciss Max Vds

9750pF @ 30V

Vgsth Max Id

3.3V @ 143μA

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.0012Ohm

Ds Breakdown Voltagemin

60V

Çalışma Sıcaklığı

-55°C~175°C TJ

Current Continuous Drain Id25

240A Tc

JESD-609 Kodu

e3

Kılıf / Paket

8-PowerSFN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSSO-F2

Drain To Source Voltage Vdss

60V

Drive Voltage Max Rds On Min Rds On

6V 10V

Parça Durumu

Active

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Fabrika Tedarik Süresi

18 Weeks

REACH Uyumluluk Kodu

not_compliant

Vgs Max

±20V

Seri

OptiMOS™

Terminal Sayısı

2

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

420 mJ

Gate Charge Qg Max Vgs

124nC @ 10V