IPS70R2K0CEAKMA1

Teknik Özellikler

Vgsth Max Id

3.5V @ 70μA

Yayın Yılı

2013

Input Capacitance Ciss Max Vds

163pF @ 100V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-40°C~150°C TJ

Ds Breakdown Voltagemin

700V

Drainsource On Resistancemax

2Ohm

Continuous Drain Current Id

4A

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-251-3 Stub Leads, IPak

JESD-609 Kodu

e3

Current Continuous Drain Id25

4A Tc

Jesd30 Code

R-PSIP-T3

Fet Feature

Super Junction

Montaj Tipi

Through Hole

Parça Durumu

Active

Drain To Source Voltage Vdss

700V

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Vgs Max

±20V

Seri

CoolMOS™

Terminal Sayısı

3

Gate Charge Qg Max Vgs

7.8nC @ 10V

Avalanche Energy Rating Eas

11 mJ

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Through Hole

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

2 Ω @ 1A, 10V

ECCN Kodu

EAR99

Power Dissipation Max

42W Tc

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE