IPS090N03LGAKMA1

Teknik Özellikler

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

HTS Kodu

8541.29.00.95

Montaj

Through Hole

Montaj Tipi

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Kılıf / Paket

TO-251-3 Stub Leads, IPak

Power Dissipation

42W

Vgs Max

±20V

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Terminal Sayısı

3

Pin Sayısı

3

Vgsth Max Id

2.2V @ 250μA

Kurşunsuz Kodu

no

Parça Durumu

Obsolete

Qualification Status

Not Qualified

Seri

OptiMOS™

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

280A

Avalanche Energy Rating Eas

70 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate Charge Qg Max Vgs

15nC @ 10V

JESD-609 Kodu

e3

Drain To Source Voltage Vdss

30V

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

1600pF @ 15V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Current Continuous Drain Id25

40A Tc

Power Dissipation Max

42W Tc

Pin Sayısı

3

Continuous Drain Current Id

40A