IPS075N03LGAKMA1

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

50A Tc

Power Dissipation Max

47W Tc

Number Of Elements

1

Reach Svhc

No SVHC

Transistor Application

SWITCHING

Rds On Max Id Vgs

7.5m Ω @ 30A, 10V

Terminal Pozisyonu

SINGLE

Pin Sayısı

3

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

50A

Gate Charge Qg Max Vgs

18nC @ 10V

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

50 mJ

Input Capacitance Ciss Max Vds

1900pF @ 15V

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

30V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Pin Sayısı

3

Terminal Sayısı

3

Vgsth Max Id

2.2V @ 250μA

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Fet Type

N-Channel

Kurşunsuz Kodu

no

Qualification Status

Not Qualified

Seri

OptiMOS™

Parça Durumu

Obsolete

Montaj

Through Hole

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation

47W

Kılıf / Paket

TO-251-3 Stub Leads, IPak

Vgs Max

±20V

Montaj Tipi

Through Hole