IPS040N03LGAKMA1

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Uzunluk

6.73mm

Pulsed Drain Currentmax Idm

400A

Turn Off Delay Time

27 ns

Gate Charge Qg Max Vgs

38nC @ 10V

Drain Currentmax Abs Id

89A

Yayın Yılı

2008

Input Capacitance Ciss Max Vds

3900pF @ 15V

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Tin (Sn)

REACH Uyumluluk Kodu

not_compliant

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drainsource On Resistancemax

0.0059Ohm

HTS Kodu

8541.29.00.95

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Genişlik

2.39mm

Transistor Element Material

SILICON

RoHS Durumu

Non-RoHS Compliant

Vgsth Max Id

2.2V @ 250μA

Kurşunsuz Kodu

no

Fet Type

N-Channel

Avalanche Energy Rating Eas

60 mJ

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

30V

Turn On Delay Time

7.4 ns

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Application

SWITCHING

Reach Svhc

No SVHC

Number Of Elements

1

Power Dissipation Max

79W Tc

Current Continuous Drain Id25

90A Tc

Continuous Drain Current Id

90A

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Yükseklik

6.22mm

Element Configuration

Single

Rds On Max Id Vgs

4m Ω @ 30A, 10V