IPP80R360P7XKSA1

Teknik Özellikler

Yüzey Montaj

NO

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

360m Ω @ 5.6A, 10V

Jedec95 Code

TO-220AB

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Power Dissipation Max

84W Tc

Current Continuous Drain Id25

13A Tc

Drain To Source Voltage Vdss

800V

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

930pF @ 500V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

34A

Avalanche Energy Rating Eas

34 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

30nC @ 10V

JESD-609 Kodu

e3

Parça Durumu

Active

Seri

CoolMOS™ P7

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Terminal Sayısı

3

Vgsth Max Id

3.5V @ 280μA

Montaj Tipi

Through Hole

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-220-3

Vgs Max

±20V

Jesd30 Code

R-PSFM-T3

Ds Breakdown Voltagemin

800V

Drainsource On Resistancemax

0.36Ohm