IPP80N06S2L09AKSA2

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn Off Delay Time

53 ns

Gate Charge Qg Max Vgs

105nC @ 10V

Yayın Yılı

2006

Turn On Delay Time

10 ns

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

2620pF @ 25V

Jedec95 Code

TO-220AB

Number Of Elements

1

Fabrika Tedarik Süresi

14 Weeks

Current Continuous Drain Id25

80A Tc

Power Dissipation Max

190W Tc

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

80A

Pin Sayısı

3

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

8.5m Ω @ 52A, 10V

Additional Feature

LOGIC LEVEL COMPATIBLE

Fall Time Typ

18 ns

Montaj

Through Hole

Max Dual Supply Voltage

55V

Montaj Tipi

Through Hole

Ambalaj

Tube

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

2V @ 125μA

Terminal Sayısı

3

Parça Durumu

Obsolete

Rise Time

19ns

Seri

OptiMOS™

Kurşunsuz

Contains Lead

Kurşunsuz Kodu

yes

Fet Type

N-Channel