IPP80N06S2L07AKSA2

Teknik Özellikler

Fet Type

N-Channel

Seri

OptiMOS™

Parça Durumu

Active

Kurşunsuz Kodu

yes

Vgsth Max Id

2V @ 150μA

Terminal Sayısı

3

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Montaj Tipi

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Max Dual Supply Voltage

55V

Drainsource On Resistancemax

0.01Ohm

Montaj

Through Hole

Additional Feature

LOGIC LEVEL COMPATIBLE

Rds On Max Id Vgs

7m Ω @ 60A, 10V

Terminal Pozisyonu

SINGLE

Continuous Drain Current Id

80A

Pin Sayısı

3

Current Continuous Drain Id25

80A Tc

Power Dissipation Max

210W Tc

Number Of Elements

1

Fabrika Tedarik Süresi

10 Weeks

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

3160pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2006

Gate Charge Qg Max Vgs

130nC @ 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Avalanche Energy Rating Eas

450 mJ

Configuration

SINGLE WITH BUILT-IN DIODE