IPP80N06S209AKSA2

Teknik Özellikler

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

80nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

370 mJ

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Pulsed Drain Currentmax Idm

320A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

2360pF @ 25V

Yayın Yılı

2006

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Number Of Elements

1

Current Continuous Drain Id25

80A Tc

Power Dissipation Max

190W Tc

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-220AB

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

9.1m Ω @ 50A, 10V

Continuous Drain Current Id

80A

Terminal Kaplaması

Tin (Sn)

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.0091Ohm

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Max Dual Supply Voltage

55V

Ambalaj

Tube

Montaj Tipi

Through Hole

Vgsth Max Id

4V @ 125μA

Terminal Sayısı

3

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Reference Standard

AEC-Q101

Parça Durumu

Active

Seri

OptiMOS™

Kurşunsuz Kodu

yes