IPP80N04S404AKSA1

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Terminal Sayısı

3

Vgsth Max Id

4V @ 35μA

Kurşunsuz

Contains Lead

Seri

OptiMOS™

Rise Time

12ns

Parça Durumu

Active

Fet Type

N-Channel

Montaj

Through Hole

Drainsource On Resistancemax

0.0046Ohm

Montaj Tipi

Through Hole

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

40V

Kılıf / Paket

TO-220-3

Vgs Max

±20V

Jedec95 Code

TO-220AB

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

80A Tc

Power Dissipation Max

71W Tc

Fabrika Tedarik Süresi

16 Weeks

Number Of Elements

1

Pin Sayısı

3

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

80A

Rds On Max Id Vgs

4.6m Ω @ 80A, 10V

Terminal Pozisyonu

SINGLE

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

100 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

43nC @ 10V

JESD-609 Kodu

e3

Turn Off Delay Time

9 ns

Turn On Delay Time

10 ns

ECCN Kodu

EAR99

Yayın Yılı

2010

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED