IPP80N04S2L03AKSA1

Teknik Özellikler

Fet Type

N-Channel

Seri

OptiMOS™

Rise Time

50ns

Parça Durumu

Obsolete

Kurşunsuz

Contains Lead

Vgsth Max Id

2V @ 250μA

Terminal Sayısı

3

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Power Dissipation

300W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Montaj Tipi

Through Hole

Max Dual Supply Voltage

40V

Montaj

Through Hole

Fall Time Typ

27 ns

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Rds On Max Id Vgs

3.4m Ω @ 80A, 10V

Terminal Pozisyonu

SINGLE

Continuous Drain Current Id

80A

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Power Dissipation Max

300W Tc

Current Continuous Drain Id25

80A Tc

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

6000pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2006

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn On Delay Time

19 ns

ECCN Kodu

EAR99

Turn Off Delay Time

77 ns

Gate Charge Qg Max Vgs

213nC @ 10V

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

4.5V 10V