IPP77N06S212AKSA2

Teknik Özellikler

Gate Charge Qg Max Vgs

60nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

280 mJ

Pulsed Drain Currentmax Idm

308A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1770pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2006

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

77A Tc

Power Dissipation Max

158W Tc

Number Of Elements

1

Fabrika Tedarik Süresi

10 Weeks

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-220AB

Rds On Max Id Vgs

12m Ω @ 38A, 10V

Terminal Pozisyonu

SINGLE

Continuous Drain Current Id

77A

Drainsource On Resistancemax

0.012Ohm

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Montaj Tipi

Through Hole

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

55V

Vgsth Max Id

4V @ 93μA

Terminal Sayısı

3

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Seri

OptiMOS™

Parça Durumu

Active

Kurşunsuz Kodu

yes