IPP70N10SL16AKSA1

Teknik Özellikler

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

240nC @ 10V

Avalanche Energy Rating Eas

700 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pulsed Drain Currentmax Idm

280A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

4540pF @ 25V

Yayın Yılı

2006

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn On Delay Time

70 ns

ECCN Kodu

EAR99

Number Of Elements

1

Current Continuous Drain Id25

70A Tc

Power Dissipation Max

250W Tc

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-220AB

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

16m Ω @ 50A, 10V

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

70A

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.025Ohm

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Power Dissipation

250W

Max Dual Supply Voltage

100V

Montaj Tipi

Through Hole

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

2V @ 2mA

Terminal Sayısı

3

Transistor Element Material

SILICON