IPP65R600E6XKSA1

Teknik Özellikler

Drainsource On Resistancemax

0.6Ohm

Montaj

Through Hole

Fall Time Typ

11 ns

Jesd30 Code

R-PSFM-T3

Vgs Max

±20V

Power Dissipation

63W

Kılıf / Paket

TO-220-3

Max Dual Supply Voltage

650V

Montaj Tipi

Through Hole

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

3.5V @ 210μA

Terminal Sayısı

3

Pin Sayısı

3

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

Fet Type

N-Channel

Parça Durumu

Obsolete

Qualification Status

Not Qualified

Rise Time

8ns

Seri

CoolMOS™

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes

Turn Off Delay Time

64 ns

Gate Charge Qg Max Vgs

23nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

440pF @ 100V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2011

Turn On Delay Time

10 ns

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Current Continuous Drain Id25

7.3A Tc

Power Dissipation Max

63W Tc

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-220AB