IPP65R150CFDAAKSA1

Teknik Özellikler

Input Capacitance Ciss Max Vds

2340pF @ 100V

Yayın Yılı

2008

Turn Off Delay Time

52.8 ns

Gate Charge Qg Max Vgs

86nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

72A

Terminal Kaplaması

Tin (Sn)

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-220AB

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.15Ohm

Fall Time Typ

5.6 ns

Additional Feature

HIGH RELIABILITY

Fet Type

N-Channel

Kurşunsuz Kodu

no

Vgsth Max Id

4.5V @ 900μA

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn On Delay Time

12.4 ns

JESD-609 Kodu

e3

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

614 mJ

Halogen Free

Halogen Free

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

150m Ω @ 9.3A, 10V

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

22.4A

Pin Sayısı

3

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Power Dissipation Max

195.3W Tc

Current Continuous Drain Id25

22.4A Tc

Transistor Application

SWITCHING

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Max Dual Supply Voltage

650V