IPP65R110CFDXKSA1

Teknik Özellikler

Fall Time Typ

6 ns

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Montaj Tipi

Through Hole

Max Dual Supply Voltage

650V

Vgsth Max Id

4.5V @ 1.3mA

Pin Sayısı

3

Terminal Sayısı

3

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Qualification Status

Not Qualified

Rise Time

11ns

Seri

CoolMOS™

Parça Durumu

Active

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

JESD-609 Kodu

e3

Turn Off Delay Time

68 ns

Gate Charge Qg Max Vgs

118nC @ 10V

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

845 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Currentmax Idm

99.6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

3240pF @ 100V

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn On Delay Time

16 ns

Drain To Source Voltage Vdss

700V

Current Continuous Drain Id25

31.2A Tc

Power Dissipation Max

277.8W Tc

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1