IPP65R045C7XKSA1

Teknik Özellikler

Montaj

Through Hole

Fall Time Typ

7 ns

Drainsource On Resistancemax

0.045Ohm

Montaj Tipi

Through Hole

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

650V

Power Dissipation

227W

Kılıf / Paket

TO-220-3

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Terminal Sayısı

3

Vgsth Max Id

4V @ 1.25mA

Kurşunsuz

Lead Free

Rise Time

14ns

Seri

CoolMOS™ C7

Parça Durumu

Active

Fet Type

N-Channel

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

249 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

93nC @ 10V

Turn Off Delay Time

82 ns

JESD-609 Kodu

e3

Turn On Delay Time

20 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Input Capacitance Ciss Max Vds

4340pF @ 400V

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Jedec95 Code

TO-220AB

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

46A Tc

Power Dissipation Max

227W Tc

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Pin Sayısı

3