IPP60R125P6XKSA1

Teknik Özellikler

Vgsth Max Id

4.5V @ 960μA

Pulsed Drain Currentmax Idm

87A

Power Dissipation Max

219W Tc

Montaj

Through Hole

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2014

Seri

CoolMOS™ P6

Turn On Delay Time

14 ns

Kurşunsuz

Lead Free

Case Connection

DRAIN

Max Dual Supply Voltage

600V

Rise Time

9ns

Kılıf / Paket

TO-220-3

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Halogen Free

Halogen Free

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

5 ns

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Rds On Max Id Vgs

125m Ω @ 11.6A, 10V

Turn Off Delay Time

44 ns

Terminal Sayısı

3

Continuous Drain Current Id

30A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2660pF @ 100V

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)