IPP60R125CPXKSA1

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

2500pF @ 100V

Terminal Kaplaması

Tin (Sn)

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

70nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Voltage Rated Dc

600V

Current Continuous Drain Id25

25A Tc

Vgsth Max Id

3.5V @ 1.1mA

Pulsed Drain Currentmax Idm

82A

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2007

Power Dissipation

208W

Avalanche Energy Rating Eas

708 mJ

Jedec95 Code

TO-220AB

Pin Sayısı

3

Montaj Tipi

Through Hole

Rise Time

5ns

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Transistor Application

SWITCHING

Rds On Max Id Vgs

125m Ω @ 16A, 10V

Turn Off Delay Time

50 ns

Terminal Sayısı

3

Continuous Drain Current Id

25A

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

650V

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Parça Durumu

Not For New Designs

Montaj

Through Hole